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Activation energy of electron-stimulated quenching of the photoluminescence of n-type porous silicon

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Abstract

The degradation of photoluminescence of porous silicon by kilovolt electrons and the mechanism and activation energy of this process have been investigated. Quantitative relations between the integral intensity of the photoluminescence and the irradiation dose and substrate temperature are obtained. The mechanism of the process is discussed and its activation energy is determined.

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References

  1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

    Article  ADS  Google Scholar 

  2. C. Tsai, K.-H. Li, J. Sarantz et al., Appl. Phys. Lett. 59, 2814 (1991).

    Article  ADS  Google Scholar 

  3. I. M. Chang, G. S. Chuo, D. C. Chang et al., J. Appl. Phys. 77, 5356 (1995).

    Google Scholar 

  4. B. M. Kostishko, A. M. Orlov, and T. G. Emel’yanova, Pis’ma Zh. Tekh. Fiz. 22(10), 68 (1996) [Tech. Phys. Lett. 22, 417 (1996)].

    Google Scholar 

  5. E. V. Astrova, A. A. Lebedev, A. D. Remenyuk et al., Fiz. Tekh. Poluprovodn. 29, y1649 (1995) [Semicond. 29, 858 (1995)].

    Google Scholar 

  6. S. Migazaki, K. Sniba, K. Sakamoto et al., Optoelectron.: Devices and Technol. 7, 95 (1992).

    Google Scholar 

  7. B. M. Kostishko, A. M. Orlov, and T. G. Emel’yanova, Izv. Ross. Akad. Nauk, Neorg. mater. 32, 1432 (1996).

    Google Scholar 

  8. F. F. Vol’kenshtein, Electronic Processes on Semiconductor Surfaces During Chemisorption [in Russian], Nauka, Moscow, 1987.

    Google Scholar 

  9. B. M. Kostishko, A. M. Orlov, and S. N. Gerasimov, in Abstracts of Reports at the 1st All-Russia Conference on Materials Engineering and the Physicochemical Principles of the Production of Doped Silicon Crystals “ Silicon-96” [in Russian], Moscow, 1996, p. 158.

  10. T. Sherwood, R. Piford, and C. Wilkey, Mass Transfer [Russian translation], Khimiya, Moscow, 1982.

    Google Scholar 

  11. S. J. Paerton, J. M. Corbett, and T. S. Shi, J. Appl. Phys. A 43, 153 (1987).

    Google Scholar 

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Authors and Affiliations

  1. Ul’yanov State University, Ul’yanov

    B. M. Kostishko, A. M. Orlov & V. A. Frolov

Authors
  1. B. M. Kostishko
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  2. A. M. Orlov
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  3. V. A. Frolov
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Additional information

Pis’ma Zh. Tekh. Fiz. 23, 44–50 (September 26, 1997)

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Kostishko, B.M., Orlov, A.M. & Frolov, V.A. Activation energy of electron-stimulated quenching of the photoluminescence of n-type porous silicon. Tech. Phys. Lett. 23, 714–716 (1997). https://doi.org/10.1134/1.1261665

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  • DOI: https://doi.org/10.1134/1.1261665

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