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Phase effects in a semiconductor laser with diffraction extraction of radiation

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Abstract

Phase effects arising in a semiconductor laser with diffraction extraction of radiation and a distributed Bragg reflector on the substrate side are taken into account exactly quantitatively and the possibilities of using these effects in lasers is analyzed. It is shown that the phase effects studied can be used to increase the laser efficiency substantially.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    M. A. Kaliteevskii, E. L. Portnoi & G. S. Sokolovskii

Authors
  1. M. A. Kaliteevskii
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  2. E. L. Portnoi
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  3. G. S. Sokolovskii
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Pis’ma Zh. Tekh. Fiz. 23, 7–11 (September 26, 1997)

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Kaliteevskii, M.A., Portnoi, E.L. & Sokolovskii, G.S. Phase effects in a semiconductor laser with diffraction extraction of radiation. Tech. Phys. Lett. 23, 699–700 (1997). https://doi.org/10.1134/1.1261660

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  • DOI: https://doi.org/10.1134/1.1261660

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