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New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

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Abstract

New potentials are demonstrated for the application of scanning electron microscope methods to identifying heteroboundaries, monitoring the sharpness of interfaces, and determining the positions of p-n junctions in laser structures based on InAsSb/InAsSbP, including at low temperatures. The method permits optimization of the parameters of long-wavelength lasers and to obtain record low threshold currents (Ith≤25 mA at T=77 K) for lasing wavelengths λ=3–3.5 μm.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    V. A. Solov’ev, M. P. Mikhailova, M. V. Stepanov, V. V. Sherstnev & Yu. P. Yakovlev

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  1. V. A. Solov’ev
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  2. M. P. Mikhailova
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  3. M. V. Stepanov
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  4. V. V. Sherstnev
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  5. Yu. P. Yakovlev
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Pis’ma Zh. Tekh. Fiz. 23, 54–60 (March 26, 1997)

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Solov’ev, V.A., Mikhailova, M.P., Stepanov, M.V. et al. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers. Tech. Phys. Lett. 23, 233–235 (1997). https://doi.org/10.1134/1.1261635

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  • DOI: https://doi.org/10.1134/1.1261635

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