Abstract
Electron transport in a one-dimensional GaAs quantum wire is modeled in the electrical quantum limit with allowance for scattering of charge carriers by polar optical phonons, impurity ions, and surface inhomogeneities.
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Pis’ma Zh. Tekh. Fiz. 23, 22–27 (February 12, 1997)
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Borzdov, V.M., Zhevnyak, O.G., Mulyarchik, S.G. et al. Monte Carlo simulation of the electron drift velocity in a one-dimensional GaAs quantum wire. Tech. Phys. Lett. 23, 98–99 (1997). https://doi.org/10.1134/1.1261576
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DOI: https://doi.org/10.1134/1.1261576