Skip to main content
SpringerLink
Log in

Microdoping of subsurface gallium arsenide layers with hydrogen ions

  • Experimental Instruments and Techniques
  • Published:
Technical Physics Aims and scope Submit manuscript

Abstract

A method of microdoping subsurface semiconductor layers with hydrogen ions (protons) with the use of a plasma-beam discharge is suggested. The method was tested on gallium arsenide layers and was proven to be more efficient than other well-known methods used for modifying subsurface layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. N. Sergeev, G. E. Remnev, and S. V. Rudnev, Thin-Film Proton-Ion Modification (Tomsk University, Tomsk, 1993).

    Google Scholar 

  2. H. A. Davis, G. E. Remnev, R. W. Stinnett, et al., MRS Bulletin, p. 58 (1996).

  3. A. V. Karelin, V. P. Demkin, and S. V. Melnichuk, in Proceedings of International Conference on Lasers’96, 1996, p. 653.

  4. Yu. P. Raizer, Physics of Gas Discharge (Nauka, Moscow, 1997).

    Google Scholar 

  5. V. P. Demkin, S. V. Mel’nichuk, and I. I. Murav’ev, Opt. Atmosfery Okeana, No. 3, 253 (1993).

  6. V. P. Demkin and N. L. Kupchinskii, Processes of Ionization with Allowance for Excited Atoms (Leningrad, 1988), p. 168.

  7. B. E. Warren, Phys. Rev. 59, 693 (1941).

    Article  ADS  MATH  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    V. V. Anisimov, V. P. Demkin, I. A. Kvint & B. S. Semukhin

  2. Institute of Physics of Strength and Materials Science, Siberian Division of the Russian Academy of Sciences, Toms, 634021, Russia

    S. V. Mel’nichuk

Authors
  1. V. V. Anisimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. P. Demkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. A. Kvint
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. V. Mel’nichuk
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. B. S. Semukhin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 70, No. 2, 2000, pp. 118–120.

Original Russian Text Copyright © 2000 by Anisimov, Demkin, Kvint, Mel’nichuk, Semukhin.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Anisimov, V.V., Demkin, V.P., Kvint, I.A. et al. Microdoping of subsurface gallium arsenide layers with hydrogen ions. Tech. Phys. 45, 260–262 (2000). https://doi.org/10.1134/1.1259609

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1259609

Keywords

Search

Navigation