Abstract
The possibilities of the most sensitive method of laser thermometry of transparent and semitransparent plates have been determined for the varying optical properties of the surface and the conditions of the surface probing. The contrast of light interference in the plates was studied as a function of the diameter of the probing laser beam, the angle of the light incidence onto the surface and its roughness, and the presence of antireflecting and reflecting films on the surface. It is established that the contrast also depends on the transverse temperature gradient in the plate. The measurements were made on silicon single crystals and the optical K-8 glass.
Similar content being viewed by others
References
A. N. Magunov, Prib. Tekh. Exp., No. 3, 6 (1998).
R. L. Anderson, Proc. SPIE 1392, 437 (1990).
K. L. Saenger, E. Tong, J. S. Logan, et al., Rev. Sci. Instr. 63, 3862 (1992).
A. N. Magunov and A. Yu. Gasilov, Mikroélektronika 26, 384 (1997).
R. A. Bond, S. Dzioba, and H. M. Naguib, J. Vac. Sci. Technol. 18(2), 35 (1981).
A. N. Magunov and E. V. Mudrov, Teplofiz. Vys. Temp. 30, 372 (1992).
A. N. Magunov, Proc. SPIE 2208, 103 (1995).
A. N. Magunov, Zavod. Lab, No. 9, 27 (1995).
A. N. Magunov, P. G. Buyanovskaya, A. Yu. Gasilov, et al., Opt. Spektrosk. 84, 68 (1998).
A. V. Belinskii, Usp. Fiz. Nauk 165, 691 (1995).
A. Yu. Gasilov and A. N. Magunov, Zavod. Lab 63(8), 32 (1997).
A. N. Golubev, Opt. Tekh., No. 4, 40 (1995).
R. Kurosaki, J. Kikuchi, and Ya. Kobayashi, Proc. SPIE 2635, 224 (1995).
O. V. Lukin and A. N. Magunov, Mikroélektronika 24, 119 (1995).
Author information
Authors and Affiliations
Additional information
__________
Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 70, No. 2, 2000, pp. 58–63.
Original Russian Text Copyright © 2000 by Magunov, Merkulov.
Rights and permissions
About this article
Cite this article
Magunov, A.N., Merkulov, S.V. Amplitudes and shapes of fabry-perot resonances in laser interference thermometry of semiconductors and dielectrics. Tech. Phys. 45, 199–204 (2000). https://doi.org/10.1134/1.1259597
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1259597