Abstract
A study is made of the change in the dependences of the normal velocity of twinning boundaries on the magnitude of shear stresses in the twinning plane v n =v n (τ) in bismuth crystals owing to ion-cluster doping and oxidation of the irradiated surface. Irradiation was by 25 keV carbonions at a dose of 1017 ion/cm2. Twinning of the crystals took place under pulsed loading conditions with pulse durations of 10−5−10−4 s and stress amplitudes of (0.2–2.0)×103 g/mm3. Carbon ion bombardment of single-crystal bismuth causes a shift in the v n =v n (τ) curve toward lower stresses. An oxide film slows down the motion of twinning dislocations.
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Zh. Tekh. Fiz. 69, 130–131 (May 1999)
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Ostrikov, O.M. Effect of carbon ion bombardment and surface oxidation on the twinning rate of single-crystal bismuth. Tech. Phys. 44, 597–598 (1999). https://doi.org/10.1134/1.1259391
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DOI: https://doi.org/10.1134/1.1259391