Abstract
The possibilities of using ferroelectric materials for new generations of integrated circuits for high-density dynamic memory (up to 1 Gbit per crystal) are discussed. The correspondence of the specific capacitance and leakage currents of thin film ferroelectric capacitors to the requirements for integrated circuits with various information capacities is examined. It is shown that the capacitance-voltage characteristic of the ferroelectric strongly influences the specific capacitance and the rate of decrease of the voltage across the capacitors when they are discharged in the process of storing information. The prospects for increasing the specific capacitance of memory capacitors using relaxor ferroelectrics are examined.
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References
D. E. Kotecki, Integrated Ferroelectrics 16, 1 (1997).
B. Jaffe, W. Cook, and H. Jaffe, Piezoelectric Ceramics [Academic Press, New York (1971); Mir, Moscow (1974), 288 pp.].
V. V. Lemanov, E. P. Smirnova, P. P. Syrnikov, and E. A. Tarakanov, Phys. Rev. B 54, 3151 (1996).
R. E. Jones, P. D. Maniar, A. C. Campbell et al., Integrated Ferroelectrics 5, 235 (1994).
K. Abe and Sh. Komatsu, Jpn. J. Appl. Phys. 32, L1157 (1993).
B. M. Gol’tsman, A. I. Dedyk, V. V. Lemanov et al., Fiz. Tverd. Tela (St. Petersburg) 38, 2493 (1996) [Phys. Solid State 38, 1368 (1996)].
B. M. Gol’tsman, V. V. Lemanov, A. I. Dedyk et al., Pis’ma Zh. Tekh. Fiz. 23(15), 46 (1997) [Tech. Phys. Lett. 23(8), 594 (1997)].
K. Abe and Sh. Komatsu, Jpn. J. Appl. Phys. 31, 2985 (1992).
S. Liang, C. S. Chem, Z. Q. Shi et al., Appl. Phys. Lett. 64, 3563 (1994).
W.-J. Lee, H.-G. Kim, and S.-G. Yoon, J. Appl. Phys. 80, 5891 (1996).
B. A. Baumert, L.-H. Chang, A. T. Matsuda et al., Integrated Ferroelectrics 17, 165 (1997).
C. S. Hwang, S. O. Park, H.-J. Cho et al., Appl. Phys. Lett. 67, 2819 (1995).
C. S. Hwang, C. S. Kang, H.-Ju. Cho et al., Integrated Ferroelectrics 12, 199 (1996).
Sh. Nagakari, K. Kamigaki, and Sh. Nambu, Jpn. J. Appl. Phys. 35, 4933 (1996).
K. R. Udayakumar, J. Chen, V. Kumar et al., in Proceedings of the 7th International Symposium on Applications of Ferroelectrics, Urbana-Champaign, 1990, pp. 744–746.
L. F. Francis and D. A. Payne, in Proceedings of the 7th International Symposium on Applications of Ferroelectrics, Urbana-Champaign, 1990 ibid., pp. 263–266.
H.-J. Cho, C. S. Kang, C. S. Hwang et al., Jpn. J. Appl. Phys. 36, L874 (1997).
S. Y. Cha, B.-T. Jang, D.-H. Kwak et al., Integrated Ferroelectrics 17, 187 (1996).
D.-S. Paik, H.-Y. Shin, H.-W. Choi et al., Ferroelectrics 200, N 1 (1997).
G. A. Smolenskii, V. A. Bokov, V. A. Isupov et al., Physics of Ferroelectric Phenomena [in Russian], Nauka, Leningrad, 1985.
C. Tantigate, J. Lee, and A. Safari, Appl. Phys. Lett. 66, 1611 (1995).
A. Patel, N. Shorrocks, and R. Whatmore, Ferroelectrics 134, 343 (1992).
E. P. Smirnova, O. V. Rubinshtein, and V. A. Isupov, Ferroelectrics 143, 263 (1993).
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Zh. Tekh. Fiz. 69, 89–92 (May 1999)
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Gol’tsman, B.M., Yarmarkin, V.K. Ferroelectric materials for dynamic-memory integrated circuits. Tech. Phys. 44, 558–561 (1999). https://doi.org/10.1134/1.1259382
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DOI: https://doi.org/10.1134/1.1259382