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Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing

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Abstract

The results of experimental investigations of gallium arsenide single crystals with the orientations (100), (311)A, (211)A, (111)A, and (221)A are presented. The crystals were doped with silicon ions on the Iolla-3M setup (ion energy 75 keV, ion beam density 1 µA/cm2, implantation dose 1.2×103 cm−2) at room temperature and annealed on the Impul’s-5 setup at 950°C. Raman scattering and low-temperature photoluminescence methods established that the highest electrical activity of the implanted silicon under identical implantation and annealing conditions obtains for (100) and (311)A gallium arsenide. In the process n-type layers are produced.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252028, Kiev, Ukraine

    S. V. Vasil’kovskii, R. V. Konakova & Yu. A. Tkhorik

  2. Government Science and Industrial Association “Istok,”, 141120, Fryazino, Moscow Region, Russia

    M. P. Dukhnovskii

Authors
  1. S. V. Vasil’kovskii
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  2. R. V. Konakova
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  3. Yu. A. Tkhorik
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  4. M. P. Dukhnovskii
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Zh. Tekh. Fiz. 69, 78–82 (May 1999)

Deceased.

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Vasil’kovskii, S.V., Konakova, R.V., Tkhorik, Y.A. et al. Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing. Tech. Phys. 44, 548–552 (1999). https://doi.org/10.1134/1.1259381

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  • DOI: https://doi.org/10.1134/1.1259381

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