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Calculation of the electrostriction effect in thin-film metal-ferroelectric-metal structures

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Abstract

An analysis is made of the influence of electron injection from the cathode on the electrical conductivity and nonuniform thickness distribution of the piezoelectric properties of metal-insulator-metal structures using an electrostrictive, optically transparent FE ceramic such as lanthanum-containing lead zirconate titanate (PLZT). Because thin-film insulators, in contact with metal electrodes, exhibit semiconducting properties, the theory put forward by Mott and Gurney for insulating diodes can be used to calculate the electric fields and currents. The distribution of the polarization over the thickness of the piezoelectric layer was determined by means of an asymptotic solution, and relations were formulated for the electroelasticity of FE ceramic plates and shells. A detailed analysis was made of the electromechanical bending effect in homogeneous piezoelectric plates used as optical radiation modulators. It is shown that these formulas can be used for a computational and experimental determination of the distribution of the polarization over the thickness of thin-film piezoelectric structures.

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Zh. Tekh. Fiz. 69, 120–124 (July 1999)

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Bogomol’nyi, V.M. Calculation of the electrostriction effect in thin-film metal-ferroelectric-metal structures. Tech. Phys. 44, 846–849 (1999). https://doi.org/10.1134/1.1259362

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  • DOI: https://doi.org/10.1134/1.1259362

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