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Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations

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Abstract

The structural perfection of GaAs epitaxial films grown by molecular beam epitaxy on substrates with the (100), (111)A, and (111)B orientations is investigated by double-crystal and triple-crystal x-ray diffractometry. It is found that the ratio γ of the molecular fluxes of arsenic and gallium has a strong influence on the structural quality of the epitaxial films. The optimum values of the parameter γ are found for each of the substrate orientations (100), (111)A, and (111)B.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 103907, Moscow, Russia

    G. B. Galiev, V. G. Mokerov, Yu. V. Slepnev & Yu. V. Khabarov

  2. Institute of Crystallography, Russian Academy of Sciences, 117333, Moscow, Russia

    A. A. Lomov & R. M. Imamov

Authors
  1. G. B. Galiev
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  2. V. G. Mokerov
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  3. Yu. V. Slepnev
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  4. Yu. V. Khabarov
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  5. A. A. Lomov
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  6. R. M. Imamov
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Additional information

Zh. Tekh. Fiz. 69, 68–72 (July 1999)

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Galiev, G.B., Mokerov, V.G., Slepnev, Y.V. et al. Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations. Tech. Phys. 44, 801–803 (1999). https://doi.org/10.1134/1.1259351

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  • DOI: https://doi.org/10.1134/1.1259351

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