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Quantitative x-ray topographic analysis of the defects of 6H-SiC single crystals and homoepitaxial silicon carbide

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Abstract

Planar dislocation pileups (PDPs) and curvilinear dislocation segments (CDSs) are considered as indicators of the local elastic shear stress fields (LESSFs) that existed in the growing single crystals at the time of stabilization of their dislocation structure. Calculations using the theory of dislocations with the experimental parameters of PDPs and CDSs measured from the x-ray topograms (taken by the Lang and divergent-polychromatic-beam (DPB) methods) give values of the LESSFs in the range (0.2–1.5)×106 Pa for thin single-crystal wafers of SiC (6H) grown by sublimation in a graphite container. A strong nonuniform bending of the single-crystal wafers is observed; for the x-ray topographic study of the dislocation structure in these wafers the DPB method is preferable to the Lang method on account of its low sensitivity to bending.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 141120, Fryazino, Moscow Region, Russia

    G. F. Kuznetsov

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  1. G. F. Kuznetsov
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Zh. Tekh. Fiz. 69, 64–67 (July 1999)

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Kuznetsov, G.F. Quantitative x-ray topographic analysis of the defects of 6H-SiC single crystals and homoepitaxial silicon carbide. Tech. Phys. 44, 797–800 (1999). https://doi.org/10.1134/1.1259350

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  • DOI: https://doi.org/10.1134/1.1259350

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