Abstract
It is shown that a new emission band at 1.35 eV (77 K) is observed in the photoluminescence spectra of laser-modified InP crystals, irrespective of the type of impurity or its concentration in the initial crystal. It is established that the emergence of this band is a common property of the lattice defect state of the modified semiconductors.
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Zh. Tekh. Fiz. 69, 110–111 (April 1999)
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Baimbetov, F.B., Dzhumamukhambetov, N.G. Influence of impurities on the photoluminescence of modified InP crystals. Tech. Phys. 44, 450–451 (1999). https://doi.org/10.1134/1.1259318
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DOI: https://doi.org/10.1134/1.1259318