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High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice

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Abstract

A statistical approach is used to construct a kinematic theory of x-ray diffraction on a semiconducting superlattice with a two layer period. This theory takes two types of structural deformations into account: crystal lattice defects caused by microdefects distributed chaotically over the thickness of the superlattice, and periodicity defects of an additional superlattice potential owing to random deviations in the thicknesses of the layers of its period from specified values. Numerical simulation is used to illustrate the effect of structural defects on the development of the diffraction reflection curve. The theory is used to analyze experimental x-ray diffraction spectra of semiconducting InxGa1−x As/GaAs superlattices.

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Authors and Affiliations

  1. Syktyvkar State University, 167001, Syktyvkar, Russia

    Ya. I. Nesterets, V. I. Punegov & K. M. Pavlov

  2. A. F. Ioffe Physicotechnical Institute, 194021, St. Petersburg, Russia

    N. N. Faleev

Authors
  1. Ya. I. Nesterets
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  2. V. I. Punegov
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  3. K. M. Pavlov
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  4. N. N. Faleev
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Additional information

Zh. Tekh. Fiz. 69, 44–53 (February 1999)

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Nesterets, Y.I., Punegov, V.I., Pavlov, K.M. et al. High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice. Tech. Phys. 44, 171–179 (1999). https://doi.org/10.1134/1.1259279

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  • DOI: https://doi.org/10.1134/1.1259279

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