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Influence of physical and chemical surface treatment on the photoluminescence of porous silicon

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Abstract

It is shown that surface treatment of porous silicon in inorganic acids and solutions of metal chlorides leads to an increase in the intensity of photoluminescence of this material. In the case of chlorides, a short-wavelength shift of the photoluminescence maximum is also observed. The effect of a brief high-temperature anneal in vacuum on the photoluminescence of porous silicon is investigated. Such treatment is observed to cause partial degradation.

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References

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Authors and Affiliations

  1. Kherson State Technical University, 325008, Kherson, Ukraine

    I. E. Maronchuk, M. N. Naidenkov, M. V. Naidenkova, A. V. Sarikov & T. L. Voloshina

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  1. I. E. Maronchuk
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  2. M. N. Naidenkov
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  3. M. V. Naidenkova
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  4. A. V. Sarikov
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  5. T. L. Voloshina
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Zh. Tekh. Fiz. 69, 133–134 (January 1999)

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Maronchuk, I.E., Naidenkov, M.N., Naidenkova, M.V. et al. Influence of physical and chemical surface treatment on the photoluminescence of porous silicon. Tech. Phys. 44, 122–123 (1999). https://doi.org/10.1134/1.1259266

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  • DOI: https://doi.org/10.1134/1.1259266

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