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Efficiency of excitation of space-charge waves in a thin-film semiconductor structure with a single strip Schottky barrier

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Abstract

Results of a theoretical analysis of the influence of various factors on the efficiency of excitation of space-charge waves in thin-film semiconductor structures by a single strip Schottky barrier are presented. It is shown that to increase the efficiency of conversion of a microwave signal into space-charge waves, it is advisable to use a Schottky barrier with a small contact potential with optimized values of the width of the Schottky barrier and the electron concentration in the film.

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Authors and Affiliations

  1. N. G. Chernyshevski Saratov State University, 410601, Saratov, Russia

    A. I. Mikhailov & S. A. Sergeev

Authors
  1. A. I. Mikhailov
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  2. S. A. Sergeev
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Zh. Tekh. Fiz. 69, 128–130 (January 1999)

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Mikhailov, A.I., Sergeev, S.A. Efficiency of excitation of space-charge waves in a thin-film semiconductor structure with a single strip Schottky barrier. Tech. Phys. 44, 117–119 (1999). https://doi.org/10.1134/1.1259264

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  • DOI: https://doi.org/10.1134/1.1259264

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