Abstract
The method of deep-level transient spectroscopy is used to investigate aspects of the formation of radiation defects in silicon p +-n diffusion structures when bombarded by accelerated electrons. It is shown that for base thicknesses of the p +-n structures in the range 0.2–0.6mm a substantial change in the concentration of the radiation defects formed in this way is observed, having a maximum at 0.25 mm. Below 0.2 mm and above 0.6 mm the concentration of radiation defects exhibits a weak dependence on base thickness. The observed effect is explained by variation of the relative concentrations of vacancies and interstitial silicon atoms in the base during formation of p +-n pairs.
References
Physical Processes in Irradiated Semiconductors [in Russian], edited by L. S. Smirnov (Nauka, Novosibirsk, 1977).
Questions of the Radiation Technology of Semiconductors [in Russian], edited by L. S. Smirnov (Nauka, Novosibirsk, 1980).
V. S. Vavilov and N. A. Ukhin, Radiation Defects in Semiconductors and Semiconductor Devices [in Russian], Atomizdat, Moscow, 1969.
Action of Penetrating Radiation on the Products of Electronics Technology [in Russian], edited by E. A. Ladygin (Sov. Radio, Moscow, 1980).
F. P. Korshunov, G. V. Gatal’skii, and G. M. Ivanov, Radiation Effects in Semiconductor Devices [in Russian], Nauka i Tekhnika, Minsk, 1976.
L. S. Berman and A. A. Lebedev, Deep-Level Transient Spectroscopy in Semiconductors [in Russian], Nauka, Leningrad, 1981.
V. S. Vavilov, V. B. Glazman, N. U. Isaev, B. N. Mukashev, and A. V. Spitsyn, Fiz. Tekh. Poluprovodn. 8, 471 (1974) [Sov. Phys. Semicond. 8, 303 (1974)].
A. A. Zolotukhin and L. S. Milevskii, Fiz. Tekh. Poluprovodn. 6, 2240 (1972) [Sov. Phys. Semicond. 6, 1886 (1972)].
Yu. M. Dobrovinskii, Sh. Makhkamov, A. Mirzaev et al., Fiz. Tekh. Poluprovodn. 25, 523 (1991) [Sov. Phys. Semicond. 25, 316 (1991)].
A. A. Zolotukhin, A. K. Kovalenko, G. M. Meshcheryakova, et al., Fiz. Tekh. Poluprovodn. 9, 1201 (1975) [Sov. Phys. Semicond. 9, 800 (1975)].
Sh. Makhkamov, M. Mamanova, Yu. V. Pakharukov, and N. A. Tursunov, Pis’ma Zh. Tekh. Fiz. 18(24), 44 (1992) [Tech. Phys. Lett. 18, 811 (1992)].
N. N. Gerasimenko, A. V. Dvurechenskii, V. I. Panov, and L. S. Smirnov, Fiz. Tekh. Poluprovodn. 5, 1644 (1971) [Sov. Phys. Semicond. 5, 1439 (1971)].
E. N. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
Yu. V. Vyzhigin, N. A. Sobolev, B. P. Gresserov, and E. I. Shek, Fiz. Tekh. Poluprovodn. 25, 1324 (1991) [Sov. Phys. Semicond. 25, 799 (1991)].
Author information
Authors and Affiliations
Additional information
Zh. Tekh. Fiz. 69, 121–123 (January 1999)
Rights and permissions
About this article
Cite this article
Makhkamov, S., Tursunov, N.A., Ashurov, M. et al. Characteristics of the formation of radiation defects in silicon structures. Tech. Phys. 44, 110–112 (1999). https://doi.org/10.1134/1.1259262
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1259262