Abstract
The densities of electrons in the two-dimensional and doped channels of selectively doped AlGaAs/GaAs heterostructures are calculated. It is shown that traps and surface states in the AlGaAs layer can change the sign of the temperature dependence of the electron density in the two-dimensional channel.
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Zh. Tekh. Fiz. 68, 140–142 (October 1998)
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Dmitriev, S.G., Spiridonov, K.I. Influence of defects on the temperature dependence of the density of electrons in the two-dimensional and doped channels of selectively doped AlxGa1−x As/GaAs heterostructures. Tech. Phys. 43, 1266–1268 (1998). https://doi.org/10.1134/1.1259181
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DOI: https://doi.org/10.1134/1.1259181