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Modeling of certain nonuniform processes in semiconductor technology

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Abstract

In this paper two problems are formulated and solved: the problem of diffusion in a two-phase system with a moving boundary, and the problem of taking into account the finite reaction rate for formation of the new phase. A numerical solution is found by a variational method, which has a number of practical advantages.

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Authors and Affiliations

  1. Voronezh State University, 394693, Voronezh, Russia

    B. A. Zon, S. B. Ledovskii & A. N. Likholet

Authors
  1. B. A. Zon
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  2. S. B. Ledovskii
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  3. A. N. Likholet
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Additional information

Zh. Tekh. Fiz. 68, 75–82 (April 1998)

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Zon, B.A., Ledovskii, S.B. & Likholet, A.N. Modeling of certain nonuniform processes in semiconductor technology. Tech. Phys. 43, 416–422 (1998). https://doi.org/10.1134/1.1258997

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  • DOI: https://doi.org/10.1134/1.1258997

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