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Relationship between the electronic properties of the interface and the interphase interactions in NbN-GaAs heterostructures

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Abstract

Peculiarities of contact formation in the system NbN-GaAs upon a change in the structural-phase state of the deposited metal are investigated. It is shown that the role of the chemical factor in the processes of contact formation decreases as the degree of structural perfection of the NbN alloy increases. The causes of the corresponding changes in the electronic structure of the interface as a result of the phase transition NbN-Nb4N3 are discussed. The Auger spectrum and current-voltage and capacitance-voltage characteristics of NbN-GaAs surface-barrier structures are measured before and after annealing in vacuum at T=850 °C for 10 s.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukraine Academy of Sciences, 252650, Kiev, Ukraine

    A. A. Belyaev, E. F. Venger, V. G. Lyapin, R. V. Konakova, V. V. Milenin & Yu. A. Tkhorik

  2. Slovakian Technical University, Bratislava, Slovakia

    I. Hotovy

  3. Institute of Surface Chemistry, Ukraine Academy of Sciences, Kiev, Ukraine

    G. N. Kashin

Authors
  1. A. A. Belyaev
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  2. E. F. Venger
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  3. V. G. Lyapin
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  4. R. V. Konakova
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  5. V. V. Milenin
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  6. Yu. A. Tkhorik
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  7. I. Hotovy
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  8. G. N. Kashin
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Additional information

Zh. Tekh. Fiz. 68, 63–66 (January 1998)

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Belyaev, A.A., Venger, E.F., Lyapin, V.G. et al. Relationship between the electronic properties of the interface and the interphase interactions in NbN-GaAs heterostructures. Tech. Phys. 43, 56–59 (1998). https://doi.org/10.1134/1.1258936

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  • DOI: https://doi.org/10.1134/1.1258936

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