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Semiconductor-metal phase transition under a strain induced by a spherical indenter

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Abstract

A semiconductor-metal phase transition is produced in samarium monosulfide under the action of the pressure of a spherical indenter in the region of quasiuniaxial compression of the sample material under the indenter and investigated. It is shown that the phase transition occurs when the decrease in the volume of SmS under the action of the applied field reaches a critical value of 4–5% at T=300 K. The temperature dependence of the critical volume decrease is recorded in the range 280–440 K.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. V. Kaminskii

  2. Institute of Physics, Slovak Academy of Sciences, 84228, Bratislava, Slovakia

    S. Lanyi

Authors
  1. V. V. Kaminskii
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  2. S. Lanyi
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Zh. Tekh. Fiz. 68, 53–57 (March 1998)

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Kaminskii, V.V., Lanyi, S. Semiconductor-metal phase transition under a strain induced by a spherical indenter. Tech. Phys. 43, 314–317 (1998). https://doi.org/10.1134/1.1258916

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  • DOI: https://doi.org/10.1134/1.1258916

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