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A new universal method of monitoring layer parameters and surface roughness in vacuum deposition and etching processes

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References

  1. M. S. Sterheim, W. Gelder, and A. W. Hartman, J. Electrochem. Soc. 130, 655 (1983).

    Google Scholar 

  2. B. Hong, W. Wakagi, R. W. Collins et al., Diamond Related Mater. 3, 431 (1994).

    Google Scholar 

  3. H. Tsai and B. Body, J. Vac. Sci. Technol. A 5, 3287 (1987).

    Article  ADS  Google Scholar 

  4. V. V. Sleptsov, A. A. Kuzin, G. F. Ivanovsky et al., J. Non-Cryst. Solids 136, 53 (1991).

    Article  Google Scholar 

  5. I. F. Mikhailov, V. I. Pinegin, V. V. Sleptsov, and A. M. Baranov, Cryst. Res. Technol. 30, 643 (1995).

    Google Scholar 

  6. A. M. Baranov, S. A. Tereshin, I. F. Mikhailov et al., Proc. SPIE 2519, 108 (1995).

    ADS  Google Scholar 

  7. G. F. Ivanovskii and V. I. Petrov, Ion-Plasma Treatment of Materials [in Russian], Radio i Svyaz’, Moscow (1986).

    Google Scholar 

  8. A. V. Vinogradov and I. V. Kozhevnikov, Tr. Fiz. Inst. Akad. Nauk SSSR 196, 63 (1989).

    Google Scholar 

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Zh. Tekh. Fiz. 67, 62–64 (August 1997)

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Baranov, A.M., Tereshin, S.A. & Mikhailov, I.F. A new universal method of monitoring layer parameters and surface roughness in vacuum deposition and etching processes. Tech. Phys. 42, 910–912 (1997). https://doi.org/10.1134/1.1258734

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