Abstract
The formation and destruction of the surface silicide on W(100) after cleaning of the sample surface and bulk in various regimes is studied by high-resolution Auger electron spectroscopy. It is shown that the cleanness of the bulk has practically no influence on the laws governing the formation of the surface silicide when Si atoms are adsorbed on a heated W surface and that almost up to completion of its formation all the silicon atoms impinging on the surface, from the very first, remain on it and are incorporated into the surface silicide. The destruction of the surface silicide depends in a definite manner on the state of the bulk, and at T=1400 K it is apparently limited in the early stages by the passage of Si atoms from the surface to the subsurface layer and in subsequent stages by the diffusion of silicon within the substrate. The bulk silicon density that limits the destruction of the surface silicide is estimated.
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Zh. Tekh. Fiz. 67, 137–140 (July 1997)
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Gall’, N.R., Rut’kov, E.V., Tontegode, A.Y. et al. Influence of the state of the bulk of the sample on the formation and thermal stability of the surface silicide on W(100). Tech. Phys. 42, 848–851 (1997). https://doi.org/10.1134/1.1258732
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DOI: https://doi.org/10.1134/1.1258732