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Pulse characteristics of Hg0.8Cd0.2Te n +-p junctions

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Abstract

The pulse characteristics of Hg0.8Cd0.2Te n +-p junctions are investigated. It is shown that the shape of the voltage pulse appearing in a junction on passage of a forward (reverse) current is determined by the recombination (generation) of nonequilibrium electrons in the hole region. An increase in the current pulse causes the appearance of an electric field, which draws electrons into the interior of the base region, and leads to variation of their lifetime because of the complex structure of the n +-p junction.

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References

  1. É. A. Shevtsov and M. E. Belkin, Photodetection Devices for Fiber-Optic Communication Systems [in Russian], Radio i Svyaz’, Moscow (1992).

    Google Scholar 

  2. S. V. Belotelov, V. I. Ivanov-Omskii, A. I. Izhnin, and V. A. Smirnov, Fiz. Tekh. Poluprovodn. 25, 1058 (1991) [Sov. Phys. Semicond. 25, 637 (1991)].

    Google Scholar 

  3. D. L. Spears, in Lasers and Electrons. Conference Proceedings, Orlando, Florida, New York, (1989), pp. 113–116.

  4. M. G. Andrukhiv, S. V. Belotelov, and I. S. Virt, Fiz. Tekh. Poluprovodn. 27, 1863 (1993) [Semiconductors 27, 1026 (1993)].

    Google Scholar 

  5. Yu. R. Nosov, Switching in Semiconductor Diodes, Plenum Press, New York (1969).

    Google Scholar 

  6. A. Rogalski and Y. Piotrowski, Prog. Quantum Electron. 12(2–3), 87 (1988).

    Google Scholar 

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Authors and Affiliations

  1. I. Franko Drogobych State Teachers Institute, 293720, Drogobych, Ukraine

    I. S. Virt

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  1. I. S. Virt
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Zh. Tekh. Fiz. 67, 130–133 (July 1997

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Virt, I.S. Pulse characteristics of Hg0.8Cd0.2Te n +-p junctions. Tech. Phys. 42, 841–844 (1997). https://doi.org/10.1134/1.1258730

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  • DOI: https://doi.org/10.1134/1.1258730

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