Abstract
The correctness of the two-dimensional description of the transfer of injected carriers in the base regions of drift injection magnetosensitive structures is substantiated. A criterion for selecting one of these models in accordance with the technological-design parameters and the electrical regime of the structures is obtained.
Similar content being viewed by others
References
I. M. Vikulin, M. A. Glauberman, and N. A. Kanishcheva, Fiz. Tekh. Poluprovodn. 11, 645 (1977) [Sov. Phys. Semicond. 11, 377 (1977)].
I. M. Vikulin, M. A. Glauberman, G. A. Egiazaryan et al., Fiz. Tekh. Poluprovodn. 15, 479 (1981) [Sov. Phys. Semicond. 15, 274 (1981)].
L. W. Davies and M. S. Wells, Proc. IREE Austr. (6), 235 (1971).
W. Allegretto, A. Nathan, and H. P. Baltes, in NACECODE V, Proceedings of the 5th International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Ireland, 1987, pp. 87–92.
I. M. Vikulin, M. A. Glauberman, and V. V. Egorov, Elektron. Tekh., Ser. 2: Poluprovodn. Prib. (1), 9 (1990).
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley-Interscience, New York (1969) [Russ. transl., Mir, Moscow (1984), Vol. 1].
S. V. Gumenyuk, in Abstracts of Reports to the Scientific-Technical Conference “Sensors Based on Microelectronics Technologies” [in Russian], Moscow, 1989, pp. 85–87.
V. S. Lysenko, R. N. Litovskii, Ch. S. Roumenin, and N. D. Smirnov, Rev. Phys. Appl. 18, 87 (1983).
Author information
Authors and Affiliations
Additional information
Zh. Tekh. Fiz. 67, 39–41 (July 1997)
Rights and permissions
About this article
Cite this article
Glauberman, M.A., Egorov, V.V., Kanishcheva, N.A. et al. Features of the two-dimensional modeling of drift injection magnetosensitive structures. Tech. Phys. 42, 752–754 (1997). https://doi.org/10.1134/1.1258713
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1258713