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Properties of Al, (AuGe)-GaAs contacts fabricated by combining ion-beam treatment and metallization

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References

  1. N. Einspruch and W. Weissman [Eds.], Gallium Arsenide in Microelectronics [Russian translation], Mir, Moscow, 1988.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Ukrainian Academy of Sciences, 252650, Kiev, Ukraine

    I. B. Ermolovich, I. Yu. Il’in, R. V. Konakova & V. V. Milenin

  2. Scientific-Research Institute “Saturn”’ Kiev, Ukraine

    I. B. Ermolovich, I. Yu. Il’in, R. V. Konakova & V. V. Milenin

Authors
  1. I. B. Ermolovich
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  2. I. Yu. Il’in
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  3. R. V. Konakova
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  4. V. V. Milenin
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Zh. Tekh. Fiz. 67, 123–124 (February 1997)

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Ermolovich, I.B., Il’in, I.Y., Konakova, R.V. et al. Properties of Al, (AuGe)-GaAs contacts fabricated by combining ion-beam treatment and metallization. Tech. Phys. 42, 232–233 (1997). https://doi.org/10.1134/1.1258631

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  • DOI: https://doi.org/10.1134/1.1258631

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