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Microwave noise of a thin-film YBa2Cu3O7−x bridge in the resistive state

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Abstract

The effective input noise temperature T e of a bridge made from a highly oriented YBaCuO film is measured at a frequency of 4.6 GHz. The bridge is brought to a weakly resistive state by a dc current, by microwave radiation at a frequency of 9.4 GHz, or by a combination of the two. Along with the noise temperature, the current-voltage characteristics and impedance of the bridge are also measured at a frequency of 4.6 GHz. At T=78 K the value of T e does not exceed 120 K. Analysis of the results allows one to compare the experimental values of T e with the values determined by the equilibrium Nyquist noise of overheated normal domains and indicates the presence of excess noise at a level comparable to the Nyquist noise.

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Authors and Affiliations

  1. St. Petersburg State Electrical Engineering University, 197376, St. Petersburg, Russia

    O. G. Vendik, V. N. Keis, A. B. Kozyrev, S. G. Kolesov & T. B. Samoilova

Authors
  1. O. G. Vendik
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  2. V. N. Keis
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  3. A. B. Kozyrev
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  4. S. G. Kolesov
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  5. T. B. Samoilova
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Zh. Tekh. Fiz. 67, 89–93 (February 1997)

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Vendik, O.G., Keis, V.N., Kozyrev, A.B. et al. Microwave noise of a thin-film YBa2Cu3O7−x bridge in the resistive state. Tech. Phys. 42, 202–205 (1997). https://doi.org/10.1134/1.1258624

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  • DOI: https://doi.org/10.1134/1.1258624

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