Abstract
We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1−x Se alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1−x Se has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1−x Se direct band gap to higher energies with increasing Be content (to 3.63 eV for x=0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.
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Fiz. Tekh. Poluprovodn. 33, 1120–1122 (September 1999)
This article was published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.
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Mintairov, A.M., Raymond, S., Merz, J.L. et al. Optical spectra of wide band gap BexZn1−x Se alloys. Semiconductors 33, 1021–1023 (1999). https://doi.org/10.1134/1.1187830
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DOI: https://doi.org/10.1134/1.1187830