Abstract
The electronic and crystalline structures of the systems formed upon deposition of silicon layers onto the Gd(0001) and Dy(0001) surfaces of single-crystal films annealed subsequently at T=450–500°C have been studied by low-energy electron diffraction (LEED) and also by the Auger electron and angle-resolved photoelectron spectroscopy of the valence band and the Si(2p) core level. It is shown that the systems thus produced can be described as starting single-crystal films of Gd and Dy, with 3D islands of the silicides of these metals on the surface of the corresponding metalfillms.
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Translated from Fizika Tverdogo Tela, Vol. 42, No. 5, 2000, pp. 942–949.
Original Russian Text Copyright © 2000 by Shikin, Grigor’ev, Prudnikova, Vyalykh, Molodtsov, Adamchuk.
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Shikin, A.M., Grigor’ev, A.Y., Prudnikova, G.V. et al. Interaction of thin silicon layers with the (0001) surface of rare-earth metals. Phys. Solid State 42, 973–980 (2000). https://doi.org/10.1134/1.1131322
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DOI: https://doi.org/10.1134/1.1131322