Abstract
It is shown that the passage of an electric current through crystalline silicon may lead to the so-called galvanoplasticization, as well as the galvanostrengthening, effect. It is found that the effect is sensitive to the temperature regime of deforming and to the preliminary high-temperature treatment of the samples. The motion delay time for short dislocations and starting stresses are significantly affected by the current. The relation of these effects to the change in the electric state of the Cottrell atmosphere as a result of the passage of the current through the crystal is considered.
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Translated from Fizika Tverdogo Tela, Vol. 42, No. 5, 2000, pp. 854–858.
Original Russian Text Copyright © 2000 by Makara, Steblenko, Obukhovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Gorid’ko, Lemeshko.
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Makara, V.A., Steblenko, L.P., Obukhovskii, V.V. et al. Effect of electric current on starting characteristics and activation parameters of short dislocations in Si crystals. Phys. Solid State 42, 877–881 (2000). https://doi.org/10.1134/1.1131305
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DOI: https://doi.org/10.1134/1.1131305