Abstract
A study is reported of the temperature dependences of the dc and ac electrical conductivities, as well as of I–V characteristics of pure and vanadium-doped germanosillenite crystals. It has been established that the charge carriers in Bi12GeO20 are electrons and holes. Doping with vanadium gives rise to a strong dependence of the conductivity and its activation energy on the dopant concentration. Within the model, the results explain the hopping-charge transfer in doped, closely compensated semiconductors.
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References
A. A. Ballman, J. Cryst. Growth 1(3), 37 (1967).
R. E. Aldrich, S. L. Hou, and M. L. Harvill, J. Appl. Phys. 42(1), 493 (1971).
V. P. Avramenko, L. P. Klimenko, A. Yu. Kudzin, et al., Fiz. Tverd. Tela (Leningrad) 19(4), 1201 (1977) [Sov. Phys. Solid State 19, 702 (1977)].
V. P. Avramenko, A. Yu. Kudzin, and G. Kh. Sokolyanskii, Fiz. Tverd. Tela (Leningrad) 22(10), 3149 (1980) [Sov. Phys. Solid State 22, 1839 (1980)].
V. P. Avramenko, A. Yu. Kudzin, and G. Kh. Sokolyanskii, in Physics of Active Insulators (DSU, Dnepropetrovsk, 1980).
V. P. Avramenko, A. Yu. Kudzin, T. V. Panchenko, et al., in Semiconductors-Ferroelectrics (RSU, Rostov, 1984).
O. A. Gudaev, Avtometriya 1, 106 (1980).
B. G. Grebmeier and R. Oberschmid, Phys. Status Solidi A 96, 199 (1986).
S. N. Plyaka and G. Kh. Sokolyanskii, Fiz. Tverd. Tela (S.-Peterburg) 40, 2054 (1998) [Phys. Solid State 40, 1859 (1998)].
G. I. Skanavi, Physics of Dielectrics (Weak-Field Region) (Fizmatgiz, Moscow, 1949).
A. N. Zyuganov and S. V. Svechnikov, Injection Contact Phenomena in Semiconductors (Naukova Dumka, Kiev, 1981).
A. Yu. Kudzin, G. Kh. Sokolyanskii, and A. S. Yudin, Fiz. Tverd. Tela (Leningrad) 30(6), 1864 (1988) [Sov. Phys. Solid State 30, 1074 (1988)].
B. I. Shklovskii and A. L. Éfros, Fiz. Tekh. Poluprovodn. 14(5), 825 (1980) [Sov. Phys. Semicond. 14, 487 (1980)].
B. I. Shklovskiii, Fiz. Tekh. Poluprovodn. 6(7), 1197 (1972) [Sov. Phys. Semicond. 6, 1053 (1972)].
B. I. Shklovskii and A. L. Éfros, Electronic Properties of Semiconductors (Nauka, Moscow, 1975).
P. G. LeComber and W. E. Spear, in Amorphous Semiconductors, Ed. by M. H. Brodsky, Topics in Applied Physics, Vol. 36 (Springer, Heidelberg, 1979; Mir, Moscow, 1982).
Y. Tawada, in Amorphous Semiconductors: Technologies & Devices, Ed. by Y. Hamakawa (North-Holland, Amsterdam, 1983; Metallurgiya, Moscow, 1986).
B. I. Shklovskii and A. L. Éfros, Zh. Éksp. Teor. Fiz. 62(3), 1156 (1972) [Sov. Phys. JETP 35, 610 (1972)].
K. Kao and W. Hwang, Electrical Transport in Solids, with Particular Reference to Organic Semiconductors (Pergamon, Oxford, 1981; Mir, Moscow, 1983).
V. V. Bryksin and G. Yu. Yashin, Fiz. Tverd. Tela 23(10), 3063 (1981) [Sov. Phys. Solid State 23, 1785 (1981)].
V. L. Bonch-Bruevich, in Abstracts VI Intern. Conference on Amorphous and Liquid Semiconductors (Leningrad, 1976), p. 16.
V. P. Avramenko, A. Yu. Kudzin, L. P. Klimenko, et al., in Active Dielectrics (Dnepropetrovsk, 1984), p. 71.
V. V. Volkov, Yu. F. Khomich, P. I. Perov, et al., Izv. Akad. Nauk SSSR, Neorg. Mater. 25(5), 827 (1989).
A. V. Egorysheva, V. V. Volkov, and M. V. Skorikov, Neorg. Mater. 31(3), 377 (1995).
R. Oberschmid, Phys. Status Solidi A 89, 263 (1985).
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Translated from Fizika Tverdogo Tela, Vol. 42, No. 5, 2000, pp. 839–843.
Original Russian Text Copyright © 2000 by Kudzin, Plyaka, Sokolyanski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\).
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Kudzin, A.Y., Plyaka, S.N. & Sokolyanskii, G.K. Effect of vanadium doping on the electrical properties of Bi12GeO20 crystals. Phys. Solid State 42, 861–865 (2000). https://doi.org/10.1134/1.1131302
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DOI: https://doi.org/10.1134/1.1131302