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On the mechanism of residual photomechanical effect

  • Defects, Dislocations, and Physics of Strength
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Abstract

The results of investigation of the residual photomechanical effect (PME) in a monocrystalline n-Si sample at various temperatures by the method of microindentation following exposure to light are considered. It is shown that a decrease in the residual PME is an exponential function of time and temperature.

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Authors and Affiliations

  1. Tbilisi State University, Tbilisi, 280028, Georgia

    A. B. Gerasimov, G. D. Chiradze, N. G. Kutivadze, A. P. Bibilashvili & Z. G. Bokhochadze

  2. Kutaisi State University, Kutaisi, 384000, Georgia

    A. B. Gerasimov, G. D. Chiradze, N. G. Kutivadze, A. P. Bibilashvili & Z. G. Bokhochadze

Authors
  1. A. B. Gerasimov
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  2. G. D. Chiradze
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  3. N. G. Kutivadze
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  4. A. P. Bibilashvili
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  5. Z. G. Bokhochadze
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Additional information

__________

Translated from Fizika Tverdogo Tela, Vol. 42, No. 4, 2000, pp. 683–684.

Original Russian Text Copyright © 2000 by Gerasimov, Chiradze, Kutivadze, Bibilashvili, Bokhochadze.

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Gerasimov, A.B., Chiradze, G.D., Kutivadze, N.G. et al. On the mechanism of residual photomechanical effect. Phys. Solid State 42, 701–702 (2000). https://doi.org/10.1134/1.1131274

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  • DOI: https://doi.org/10.1134/1.1131274

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