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Enhancement of Raman scattering intensity in porous silicon

  • Low-Dimensional Systems and Surface Physics
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Abstract

An enhancement in inelastic light scattering intensity from porous-silicon quantum wires has been discovered. It is shown that this effect is caused by a decrease in the absorption coefficient of the optical medium formed by quasi-one-dimensional structures, with the crystal structure of the wires themselves remaining unchanged.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. E. Kompan, I. I. Novak & V. B. Kulik

  2. St. Petersburg State University, St. Petersburg, Russia

    N. A. Kamakova

Authors
  1. M. E. Kompan
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  2. I. I. Novak
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  3. V. B. Kulik
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  4. N. A. Kamakova
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 41, 1320–1322 (July 1999)

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Kompan, M.E., Novak, I.I., Kulik, V.B. et al. Enhancement of Raman scattering intensity in porous silicon. Phys. Solid State 41, 1207–1209 (1999). https://doi.org/10.1134/1.1130968

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  • DOI: https://doi.org/10.1134/1.1130968

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