Skip to main content
SpringerLink
Log in

Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization

  • Semiconductors. Dielectrics
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

The first results obtained in studies of the temperature dependences of electrical conductivity and Hall constant of n-CdGeAs2 single crystals prepared by low-temperature crystallization are reported. It has been established that the method developed permits growing single crystals with a free-electron concentration ⋍(1−2)×1018 cm−3 and a Hall mobility ⋍10000 cm2/(Vs) at T=300 K. It is shown that the temperature dependence of Hall mobility exhibits a behavior characteristic of electron scattering by lattice vibrations, whereas below 150 K a deviation from this law is observed to occur evidencing an increasing contribution of static lattice defects to scattering. The Hall mobility in the crystals prepared was found to reach ⋍36000 cm2/(Vs) at 77 K. Photosensitive heterojunctions based on n-CdGeAs2 single crystals were prepared. The spectral response of the photosensitivity of these structures is analyzed. It is concluded that this method is promising for preparation of perfect CdGeAs2 crystals.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. N. A. Goryunova, Chemistry of Diamond Semiconductors [in Russian] (LGU, Leningrad, 1963).

    Google Scholar 

  2. O. M. Madelung, Physics of III–V Compounds (Springer, Berlin,: Group IV Elements and III–V Compounds) (Wiley, New York, 1964; Mir, Moscow, 1967).

    Google Scholar 

  3. V. D. Prochukhan and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 12, 209 (1978) [Sov. Phys. Semicond. 12, 118 (1978)].

    Google Scholar 

  4. M. C. Ohmer and R. Pandey, Metall. Mater. Trans. B 23, No. 7, 16 (1998).

    Google Scholar 

  5. P. G. Schunemann and T. M. Pollak, MRS Bull. 23, No. 7, 23 (1998).

    Google Scholar 

  6. B. H. Bairamov, V. Yu. Rud’, and Yu. V. Rud’, MRS Bull. 23, No. 7, 41 (1998).

    Google Scholar 

  7. P. G. Schunemann, K. L. Schepler, and P. A. Budni, MRS Bull. 23, No. 7, 45 (1998).

    Google Scholar 

  8. B. Kh. Bairamov, I. K. Polushina, V. Yu. Rud’, Yu. V. Rud’, P. G. Schunemann, M. C. Ohmer, N. C. Fernelius, G. Irmer, and J. Monecke, Fiz. Tverd. Tela (St. Petersburg) 40, 212 (1998) [Phys. Solid State 40, 190 (1998)].

    Google Scholar 

  9. R. F. Mekhtiev, É. O. Osmanov, and Yu. V. Rud’, Prib. Tekh. Éksp. No. 2, 179 (1964).

  10. A. A. Vaipolin, F. M. Gashimzade, N. A. Goryunova, F. P. Kesamanly, D. N. Nasledov, É. O. Osmanov, and Yu. V. Rud’, Izv. Akad. Nauk SSSR, Ser. Fiz. 28, 1085 (1964).

    Google Scholar 

  11. N. A. Goryunova, F. P. Kesamanly, É. O. Osmanov, and Yu. V. Rud’, Izv. Akad. Nauk SSSR, Neorg. Mater. 1, 885 (1965).

    Google Scholar 

  12. V. Yu. Rud’ and Yu. V. Rud’, Pisma Zh. Tekh. Fiz. 22, No. 2, 37 (1996) [Tech. Phys. Lett. 22, 107 (1996)].

    Google Scholar 

  13. L. B. Zlatkin, Yu. F. Markov, and I. K. Polushina, Fiz. Tekh. Poluprovodn. 3, 1590 (1969) [Sov. Phys. Semicond. 3, 1336 (1969)].

    Google Scholar 

  14. F. J. Blatt, Physics of Electronic Conduction in Solids (Academic, New York, 1957; Fizmatgiz, Leningrad, 1963).

    Google Scholar 

  15. Ch. Dovletmuradov, Yu. V. Rud’, A. Allanazarov, M. Serginov, and É. O. Osmanov, Izv. AN TSSR, Ser. Fiz. Tekh. Khim. Geolog. No. 6, 18 (1975).

  16. A. S. Borshchevskii, N. E. Dagina, A. A. Lebedev, K. Ovezov, I. K. Polushina, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 10, 1571 (1976) [Sov. Phys. Semicond. 10, 934 (1976)].

    Google Scholar 

  17. A. S. Borshchevskii, N. E. Dagina, A. A. Lebedev, I. K. Polushina, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 10, 1905 (1976) [Sov. Phys. Semicond. 10, 1136 (1976)].

    Google Scholar 

  18. A. A. Abdurakhimov, Yu. V. Rud’, K. V. Sanin, M. Serginov, and V. E. Skoryukin, Zh. Tekh. Fiz. 53, 325 (1983) [Sov. Phys. Tech. Phys. 28, 199 (1983)].

    Google Scholar 

  19. Yu. V. Rud’, Yu. K. Undalov, and N. E. Dagina, Fiz. Tekh. Poluprovodn. 13, 515 (1979) [Sov. Phys. Semicond. 13, 304 (1979)].

    Google Scholar 

  20. N. N. Konstantinova, M. A. Magomedov, V. Yu. Rud’, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. 26, 558 (1992) [Sov. Phys. Semicond. 26, 317 (1992)].

    Google Scholar 

  21. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972; Mir, Moscow, 1975).

    Google Scholar 

  22. A. Shileika, Surf. Sci. 37, 730 (1973).

    Article  Google Scholar 

  23. N. M. Mekhtiev, Yu. V. Rud’, and É. Yu. Salaev, Fiz. Tekh. Poluprovodn. 12, 1566 (1978) [Sov. Phys. Semicond. 12, 924 (1978)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    I. K. Polushina, Yu. V. Rud’ & T. N. Ushakova

  2. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    V. Yu. Rud’

Authors
  1. I. K. Polushina
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. V. Rud’
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. N. Ushakova
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. Yu. Rud’
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tverd. Tela (St. Petersburg) 41, 1190–1193 (July 1999)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Polushina, I.K., Rud’, Y.V., Ushakova, T.N. et al. Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization. Phys. Solid State 41, 1084–1087 (1999). https://doi.org/10.1134/1.1130941

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1130941

Keywords

Search

Navigation