Abstract
Low-temperature near-band-edge photoconductivity (PC) spectra of CdS crystals were studied as a function of IR illumination intensity in the PC quenching interval. The photocurrent quenching by IR light of the PC response profile has been investigated. An analysis of these relationships permitted establishing a direct connection between the r photoconductivity centers and the near-band-edge structure of the spectrum. The effect of “pinning” of majoritycarrier lifetime on the semiconductor surface has been discovered and interpreted. It is proposed that surface-acceptor states in CdS crystals play the part of surface photoconductivity centers.
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Fiz. Tverd. Tela (St. Petersburg) 41, 1181–1184 (July 1999)
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Batyrev, A.S., Bisengaliev, R.A., Batyrev, É.D. et al. Effect of IR illumination on photocurrent spectra in CdS crystals. Phys. Solid State 41, 1075–1078 (1999). https://doi.org/10.1134/1.1130939
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DOI: https://doi.org/10.1134/1.1130939