Abstract
We have investigated cathodoluminescence both in unannealed ZnSe crystals and in crystals annealed in a Bi melt at a temperature of 1200K for 120 h with subsequent quenching. In the wavelength range 450–480 nm we have detected a new line series I si -nLO-mPl consisting of the bound-exciton emission line I si with wavelength λ=455.9 nm and its plasmon and LO-phonon echoes I si -LO (λ 1=461.3 nm), I si -2LO (λ 2=466.8 nm), I si -3LO (λ 3=472.4 nm), and I si -4LO (λ 4=478.3 nm). We have determined the mean number of emitted LO phonons N LO=2.2±0.1 per photon. It is shown that the observed finer structure of the band may be due to multiphonon optical transitions. At low plasma densities (ω p ≪ω LO ) the Coulomb interaction causes broadening of the I si -nLO series. In samples with denser plasma, in which the condition ω p ⩽ω LO is met, multiplasmon satellites of the series I si -nLO-mPl are observed. Theoretical calculations of the shape of the emission band agree with experiment.
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Fiz. Tverd. Tela (St. Petersburg) 41, 1176–1180 (July 1999)
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Vavilov, V.S., Chukichev, M.V., Rezvanov, R.R. et al. A new bound-exciton emission band in ZnSe crystals and multiplasmon optical transitions. Phys. Solid State 41, 1070–1074 (1999). https://doi.org/10.1134/1.1130938
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DOI: https://doi.org/10.1134/1.1130938