Skip to main content
Log in

Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition

  • Conference Proceedings
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K=1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν=1/2 and ζ=1, which double for medium compensations (at K=38 and 54%) to ν=1 and ζ=2, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. See for a review A. Moebius et al., Phys. Rev. B (1998), to be published.

  2. R. F. Milligan, T. F. Rosenbaum, R. N. Bhatt, and G. A. Thomas, in Electron-Electron Interactions in Disordered Systems, edited by A. L. Efros and M. Pollak, Modern Problems in Condensed Matter Sciences, Volume 10, (Elsevier Science, North Holland, 1985), p. 231.

    Google Scholar 

  3. T. F. Rosenbaum, K. Andres, G. A. Thomas, and R. N. Bhatt, Phys. Rev. Lett. 45, 1723 (1982); M. A. Paalanen, T. F. Rosenbaum, G. A. Thomas, and R. N. Bhatt, Phys. Rev. Lett. 48, 1284 (1982).

    ADS  Google Scholar 

  4. P. F. Newman and D. F. Holcomb, Phys. Rev. B 28, 638 (1983).

    Article  ADS  Google Scholar 

  5. W. N. Shafarman, D. W. Koon, and T. G. Castner, Phys. Rev. B 40, 1216 (1989).

    Article  ADS  Google Scholar 

  6. A. N. Ionov, M. J. Lea, and R. Rentzsch, Pis’ma Zh. Éksp. Teor. Fiz. 54, 470 (1989) [JETP Lett. 54, 473 (1991)].

    Google Scholar 

  7. P. Dai, Y. Zhang and M. P. Sarachik, Phys. Rev. Lett. 66, 1914 (1991).

    ADS  Google Scholar 

  8. K. M. Itoh, E. E. Haller, J. W. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, and V. I. Ozhogin, Phys. Rev. Lett. 77, 4058 (1996).

    Article  ADS  Google Scholar 

  9. G. Hertel, D. J. Bishop, E. G. Spencer, J. M. Rowell, and R. C. Dynes, Phys. Rev. Lett. 50, 743 (1983).

    Article  ADS  Google Scholar 

  10. M. Yamaguchi, N. Nishida, T. Furubayashi, K. Morigaki, H. Ishimoto, and K. Ono, Physica B 118, 694 (1983).

    Google Scholar 

  11. R. Rentzsch, K. J. Friedland, A. N. Ionov, M. N. Matveev, I. S. Shlimak, C. Gladun, and H. Vinzelberg, Phys. Status Solidi B 137, 691 (1986); R. Rentzsch, K. J. Friedland, and A. N. Ionov, Phys. Status Solidi B 146, 199 (1988).

    Google Scholar 

  12. M. Rohde and H. Micklitz, Phys. Rev. B 36, 7572 (1987).

    ADS  Google Scholar 

  13. H. Strupp, M. Hornung, M. Lackner, O. Madel, and H. V. Loehneysen, Phys. Rev. Lett. 71, 2634 (1993).

    ADS  Google Scholar 

  14. I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, and L. Resnick, Phys. Rev. Lett. 77, 1103 (1996).

    Article  ADS  Google Scholar 

  15. E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979).

    Article  ADS  Google Scholar 

  16. A. MacKinnon and B. Kramer, Phys. Rev. Lett. 47, 1546 (1981).

    Article  ADS  Google Scholar 

  17. T. Ohtsuki, B. Kramer, and Y. Ono, Solid State Commun. 81, 477 (1992).

    Article  Google Scholar 

  18. M. Henneke, B. Kramer, and T. Ohtsuki, Europhys. Lett. 27, 389 (1994).

    Google Scholar 

  19. E. Hofstetter and M. Schreiber, Phys. Rev. Lett. 73, 3137 (1994).

    Article  ADS  Google Scholar 

  20. T. Kawabayashi, T. Ohtsuki, K. Slevin, and Y. Ono, Phys. Rev. Lett. 77, 3593 (1996).

    ADS  Google Scholar 

  21. J. Chayes, L. Chayes, D. S. Fisher, and T. Spencer, Phys. Rev. Lett. 54, 2375 (1986).

    MathSciNet  Google Scholar 

  22. A. L. Efros and B. I. Shklovskii, in Electronic Properties of Doped Semiconductors. (Springer-Verlag, Berlin, 1984), pp. 240, 211.

    Google Scholar 

  23. R. Rentzsch, A. N. Ionov, Ch. Reich, M. Müller, B. Sandow, P. Fozooni, M. J. Lea, V. Ginodman, and I. Shlimak, Phys. Status Solidi B 205, 269 (1998); R. Rentzsch, Ch. Reich, A. N. Ionov, P. Fozooni, and M. J. Lea, Proceedings of the 24th International Conference on the Physics of Semiconductors ICPS-24. Jerusalem (1998).

    ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

Fiz. Tverd. Tela (St. Petersburg) 41, 837–840 (May 1999)

Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Rentzsch, R., Reich, C., Ionov, A.N. et al. Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition. Phys. Solid State 41, 757–760 (1999). https://doi.org/10.1134/1.1130864

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1130864

Keywords

Navigation