Abstract
We present a critical review of the present state of the critical exponent puzzle of the metal-insulator transition of doped semiconductors with emphasis on the role of meso-and macroscopic inhomogeneity caused by the disorder of intended or unintended acceptors and donors in crystals. By using both isotopic engineering and neutron transmutation doping (NTD) of germanium we found for low compensations (at K=1.4 and 12%) that the critical exponents of the localization length and the dielectric constant are nearly ν=1/2 and ζ=1, which double for medium compensations (at K=38 and 54%) to ν=1 and ζ=2, respectively.
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Fiz. Tverd. Tela (St. Petersburg) 41, 837–840 (May 1999)
Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.
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Rentzsch, R., Reich, C., Ionov, A.N. et al. Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition. Phys. Solid State 41, 757–760 (1999). https://doi.org/10.1134/1.1130864
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DOI: https://doi.org/10.1134/1.1130864