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Phase transition to the conducting state in a system of charge-transfer excitons at a donor-acceptor interface

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Abstract

We discuss the phase transition to the conducting state in a system of 2D charge-transfer excitons (CTEs) at a donor-acceptor interface. The phase transition arises due to strong dipole-dipole repulsion between CTEs which stimulates the population of free carriers in higher energy states even at low temperature. We use the computer simulations with the random distribution of excitons, with finite lifetime explicitly taken into account. The critical concentration of CTEs and their energy distribution are calculated. We also discuss the possibility of observing the predicted phenomena.

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Authors and Affiliations

  1. Institute of Spectroscopy, Russian Academy of Sciences, 142092, Troitsk, Moscow District, Russia

    V. M. Agranovich & S. A. Kiselev

  2. The Princeton Materials Institute, Princeton University, Princeton, NJ, 08544, USA

    Z. G. Soos & S. R. Forrest

Authors
  1. V. M. Agranovich
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  2. S. A. Kiselev
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  3. Z. G. Soos
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  4. S. R. Forrest
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 41, 781–784 (May 1999)

Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.

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Agranovich, V.M., Kiselev, S.A., Soos, Z.G. et al. Phase transition to the conducting state in a system of charge-transfer excitons at a donor-acceptor interface. Phys. Solid State 41, 704–707 (1999). https://doi.org/10.1134/1.1130853

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