Abstract
This is the first report of preparation of C60 fullerite films on silicon substrates coated by a layer of natural oxide. The crystallites are about 1 µm in size. The films were found to have an enhanced stability to atmospheric oxygen. The films were obtained by a modified method of discrete evaporation in a quasi-closed volume. The principal features of the method are the quasi-equilibrium condensation conditions, a high substrate temperature (up to 300 °C), and alternation of deposition with recrystallization in a single technological cycle. The method is characterized by high film condensation rates (up to 2000 Å/min) and an economical expenditure of the starting material. A study has been made of the surface structure and morphology, and of the depth profile of the film optical constants and elemental composition.
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Fiz. Tverd. Tela (St. Petersburg) 41, 354–359 (February 1999)
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Makarova, T.L., Vul’, A.Y., Zakharova, I.B. et al. Oriented growth of oxygen-free C60 crystallites on silicon substrates. Phys. Solid State 41, 319–323 (1999). https://doi.org/10.1134/1.1130774
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DOI: https://doi.org/10.1134/1.1130774