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Erbium in silicon carbide crystals: EPR and high-temperature luminescence

  • Semiconductors and Insulators
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Abstract

Erbium ions have been incorporated for the first time in bulk 6H-SiC crystals during growth, and they were unambiguously identified from the 167Er EPR hyperfine structure. High-temperature luminescence of erbium ions at a wavelength of 1.54 µm has been detected. The observed luminescence exhibits an increase in intensity with increasing temperature. The observation of Er luminescence in 6H-SiC offers a promising potential for development of semiconductor light-emitting devices at a wavelength within the fiber-optics transparency window.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    P. G. Baranov, I. V. Ilyin, E. N. Mokhov, A. B. Pevtsov & V. A. Khramtsov

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  1. P. G. Baranov
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  2. I. V. Ilyin
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  3. E. N. Mokhov
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  4. A. B. Pevtsov
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  5. V. A. Khramtsov
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Fiz. Tverd. Tela (St. Petersburg) 41, 38–40 (January 1999)

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Baranov, P.G., Ilyin, I.V., Mokhov, E.N. et al. Erbium in silicon carbide crystals: EPR and high-temperature luminescence. Phys. Solid State 41, 32–34 (1999). https://doi.org/10.1134/1.1130723

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  • DOI: https://doi.org/10.1134/1.1130723

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