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Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals

  • Defects. Dislocations. Physics of Strength
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An Erratum to this article was published on 01 February 1999

Abstract

The transformation of the low-temperature emission spectrum of cadmium selenide crystals during plastic deformation by a point load and by uniaxial compression is investigated. A one-to-one correspondence is established between the occurrence of photoluminescence bands in the vicinity of 1.765 eV and the motion of dislocations in the prismatic slip system, on the one hand, and the emergence of a 1.792-eV band as a result of dislocation slip in the basal plane, on the other.

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Fiz. Tverd. Tela (St. Petersburg) 40, 1845–1848 (October 1998)

An erratum to this article is available at http://dx.doi.org/10.1134/1.1130776.

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Tarbaev, N.I. Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals. Phys. Solid State 40, 1672–1675 (1998). https://doi.org/10.1134/1.1130632

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  • DOI: https://doi.org/10.1134/1.1130632

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