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Donor-acceptor recombination in type-II GaAs/AlAs superlattices

  • Low-Dimensional Systems and Surface Physics
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Abstract

A study is reported of steady-and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)7(AlAs)9 superlattices grown by MBE simultaneously on (311)A-and (100)-oriented GaAs substrates. It has been established that at elevated temperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the AlAs layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia

    K. S. Zhuravlev, A. M. Gilinskii, T. S. Shamirzaev, V. V. Preobrazhenskii, B. R. Semyagin & M. A. Putyato

  2. Siberian State Geodetic Academy, 630108, Novosibirsk, Russia

    S. S. Chipkin

Authors
  1. K. S. Zhuravlev
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  2. A. M. Gilinskii
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  3. T. S. Shamirzaev
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  4. V. V. Preobrazhenskii
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  5. B. R. Semyagin
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  6. M. A. Putyato
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  7. S. S. Chipkin
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Fiz. Tverd. Tela (St. Petersburg) 40, 1734–1739 (September 1998)

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Zhuravlev, K.S., Gilinskii, A.M., Shamirzaev, T.S. et al. Donor-acceptor recombination in type-II GaAs/AlAs superlattices. Phys. Solid State 40, 1577–1581 (1998). https://doi.org/10.1134/1.1130604

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  • DOI: https://doi.org/10.1134/1.1130604

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