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Long-range structural interaction effect in gallium arsenide during ion bombardment

  • Semiconductors and Insulators
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Abstract

Transmission electron microscopy is used to study changes in the structure of gallium arsenide samples after bombardment by high doses of 5 keV argon ions. A change in the structure of the samples is observed at depths exceeding the average penetration depth of the ions by an order of magnitude. A model is proposed to explain the long-range structural interaction effect in gallium arsenide in terms of a phase transition induced by elastic stresses in the sample.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    N. A. Bert, I. P. Soshnikov & M. G. Stepanova

Authors
  1. N. A. Bert
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  2. I. P. Soshnikov
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  3. M. G. Stepanova
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 438–440 (March 1998)

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Bert, N.A., Soshnikov, I.P. & Stepanova, M.G. Long-range structural interaction effect in gallium arsenide during ion bombardment. Phys. Solid State 40, 401–403 (1998). https://doi.org/10.1134/1.1130332

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  • DOI: https://doi.org/10.1134/1.1130332

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