Abstract
A generalization applicable to magnetic semiconductors is proposed for the Mott criterion for transitions of heavily doped semiconductors from an insulating into a highly conducting state. Based on this generalization, a study is made of insulator-metal transitions in a ferromagnetic semiconductor associated with temperature variations and of insulator-metal transitions in an antiferromagnetic semiconductor acted on by a magnetic field. These results are of independent interest for nondegenerate semiconductors as well, since they yield the temperature and field dependence for the impurity state radii and for the energies and magnetizations of unionized donors or acceptors.
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Fiz. Tverd. Tela (St. Petersburg) 40, 433–437 (March 1998)
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Nagaev, É.L. Mott transitions in heavily doped magnetic semiconductors. Phys. Solid State 40, 396–400 (1998). https://doi.org/10.1134/1.1130331
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DOI: https://doi.org/10.1134/1.1130331