Skip to main content
SpringerLink
Log in

Influence of indentation-forming conditions on the estimation of the photomechanical effect

  • Defects. Dislocations. Physics of Strength
  • Published:
Physics of the Solid State Aims and scope Submit manuscript

Abstract

The anisotropy, spectral dependence, and time dependence of relaxation of the dimensions of microhardness indentations in silicon are investigated. It is shown that the time and spectral dependences correlate with the density of excited carriers in the (defective and elastically deformed) region in which they are excited, and the anisotropy is determined by various types of deformations of the chemical bonds for different positions of the indenter.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Yu. S. Boyarskaya and M. I. Val’kovskaya, Microhardness [in Russian] (Shtiintsa, Kishinev, 1981), p 67.

    Google Scholar 

  2. V. P. Alekhin and A. P. Ternovskii, in The Latest in Microhardness Testing (Nauka, Moscow, 1974), p. 29.

    Google Scholar 

  3. M. I. Val’kovskaya, B. M. Pushkash, and É. E. Maronchuk, Plasticity and Brittleness of Semiconductor Materials in Microhardness Tests [in Russian] (Shtiintsa, Kishinev, 1984), p. 100.

    Google Scholar 

  4. G. K. Kuczynski and R. H. Hochman, Phys. Rev. 108, 946 (1957).

    Article  ADS  Google Scholar 

  5. A. B. Gerasimov, Z. V. Dzhibuti, and G. D. Chiradze, Soobshch. Akad. Nauk Gruz. SSR 142, 53 (1991).

    Google Scholar 

  6. P. D. Warren, S. G. Roberts, and P. B. Hirsch, Izv. Akad. Nauk Ser. Fiz. 51, 812 (1987).

    Google Scholar 

  7. I. G. Gverdtsiteli, A. B. Gerasimov, Z. V. Dzhibuti, and M. G. Pkhakadze, Poverkhnost’, No. 11, 132 (1985).

  8. A. B. Gerasimov, in Proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors (Trans Tech Publ., Zurich, 1990): Mater. Sci. Forum 65–66, 47 (1990).

    Google Scholar 

  9. Problems in the Radiation Technology of Semiconductors [in Russian], edited by L. S. Smirnov (Nauka, Novosibirsk, 1980), p. 149.

    Google Scholar 

  10. A. B. Gerasimov, G. D. Chiradze, and N. G. Kutivadze, Bull. Kutaisi Univ., No. 2, 196 (1996).

Download references

Author information

Authors and Affiliations

  1. Tbilisi State University, 380028, Tbilisi, Georgia

    A. B. Gerasimov, G. D. Chiradze, N. G. Kutivadze, A. P. Bibilashvili & Z. G. Bokhochadze

Authors
  1. A. B. Gerasimov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. D. Chiradze
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. G. Kutivadze
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. P. Bibilashvili
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Z. G. Bokhochadze
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 503–504 (March 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Gerasimov, A.B., Chiradze, G.D., Kutivadze, N.G. et al. Influence of indentation-forming conditions on the estimation of the photomechanical effect. Phys. Solid State 40, 462–463 (1998). https://doi.org/10.1134/1.1130309

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1130309

Keywords

Search

Navigation