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Ordering of the structure of hydrogenated silicon films under the influence of laser radiation

  • Semiconductors and Insulators
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Abstract

A study is reported of the crystallization of amorphous hydrogenated silicon films under the influence continuous radiation from an argon laser. The structure was investigated by Raman scattering of light. The radiation power density during the annealing process was 1.5–4.5 kW/cm2 and the exposure was 1/125 sec. The Raman spectra were recorded for power densities below 0.1 kW/cm2. The power density threshold for the appearance of crystallites was found to be 3.0 kW/cm2. The phonon localization model was used to show that the size of the crystallites produced for power densities of 3 kW/cm2 was 40 Å.

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Authors and Affiliations

  1. P. N. Lebedev Physics Institute, Russian Academy of Sciences, 117924, Moscow, Russia

    L. P. Avakyants, V. S. Gorelik, I. A. Kurova & A. V. Chervyakov

Authors
  1. L. P. Avakyants
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  2. V. S. Gorelik
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  3. I. A. Kurova
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  4. A. V. Chervyakov
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 39, 2152–2155 (December 1997)

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Avakyants, L.P., Gorelik, V.S., Kurova, I.A. et al. Ordering of the structure of hydrogenated silicon films under the influence of laser radiation. Phys. Solid State 39, 1925–1927 (1997). https://doi.org/10.1134/1.1130201

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  • DOI: https://doi.org/10.1134/1.1130201

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