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On the nature of the spectral shift caused by photoluminescence fatigue in porous silicon

  • Semiconductors and Insulators
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Abstract

Luminescence spectra of porous silicon with a regular columnar-layered structure have been studied. A substantial narrowing of the luminescence band in samples of this type and a considerable shift of the band induced by fatigue have been established. An explanation for the spectral shift of the luminescence band resulting from fatigue relaxation is proposed for the first time.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. E. Kompan, V. E. Khartsiev, I. Yu. Shabanov & A. N. Parbukov

Authors
  1. M. E. Kompan
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  2. V. E. Khartsiev
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  3. I. Yu. Shabanov
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  4. A. N. Parbukov
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Fiz. Tverd. Tela (St. Petersburg) 39, 2137–2140 (December 1997)

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Kompan, M.E., Khartsiev, V.E., Shabanov, I.Y. et al. On the nature of the spectral shift caused by photoluminescence fatigue in porous silicon. Phys. Solid State 39, 1912–1915 (1997). https://doi.org/10.1134/1.1130198

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  • DOI: https://doi.org/10.1134/1.1130198

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