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Effect of the degree of ordering of structural vacancies on the fine structure of the valence-band top in cubic boron nitride

  • Defects. Dislocations. Physics of Strength
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Abstract

The electronic energy structure of the defect system of c-BNx with ZnS-type structure is calculated in the multiple-scattering theory by the local coherent potential method. The cluster version of the MT approximation is used to calculate the crystal potential. The effect of the relaxation of the crystal lattice on the electronic structure of nonstoichiometric boron nitride c-BN0.75 is studied and a comparison is made with the electronic energy structure of c-BN in the same approximation.

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Authors and Affiliations

  1. Donskoi State Technical University, 344010, Rostov-on-the-Don, Russia

    V. V. Ilyasov & I. Ya. Nikiforov

Authors
  1. V. V. Ilyasov
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  2. I. Ya. Nikiforov
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Fiz. Tverd. Tela (St. Petersburg) 39, 1064–1065 (June 1997)

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Ilyasov, V.V., Nikiforov, I.Y. Effect of the degree of ordering of structural vacancies on the fine structure of the valence-band top in cubic boron nitride. Phys. Solid State 39, 955–956 (1997). https://doi.org/10.1134/1.1130130

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  • DOI: https://doi.org/10.1134/1.1130130

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