Abstract
The electronic properties and mechanisms of formation of Yb-Si(111) thin-film structures, produced by room-temperature deposition of Yb atoms on the Si(111)7×7 surface are studied by Auger electron and LEED spectroscopy and the contact potential difference method. A study is also made of the effect of heating to 800 K on the properties of these structures. The interface is shown to form by the Stransky-Krastanov mechanism. Heating the Yb-Si(111) system is found to result in a very high (up to 1 eV) increase of the work function for all Yb atom concentrations on the silicon surface. In the adsorption stage, this increase is due to the growth of 2D ytterbium domains, which is accompanied by the formation of polarized domains from the silicon surface atoms with dangling valence bonds. The dipoles are oriented in such a way that their formation reduces the total energy of the Yb-Si(111) system and increases the work function. In the stage of silicide formation, the increase of the work function under heating is ultimately due to the appearance of a layer of silicon atoms on the Yb-Si(111) surface.
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Fiz. Tverd. Tela (St. Petersburg) 39, 1672–1678 (September 1997)
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Krachino, T.V., Kuz’min, M.V., Loginov, M.V. et al. Thermally activated reconstruction in Yb-Si(111) thin-film structures. Phys. Solid State 39, 1493–1497 (1997). https://doi.org/10.1134/1.1130106
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DOI: https://doi.org/10.1134/1.1130106