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Weak carrier localization on the \((10\bar 10)\) tellurium surface

  • Low-Dimensional Systems and Surface Physics
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Abstract

A theory of weak localization responsible for the negative magnetoresistance effect is developed for quantum wells at the \((10\bar 10)\) tellurium surface, which retains, in contrast to the \((\bar 12\bar 10)\) surface considered earlier, a trigonal spectrum distortion with opposite signs near the M and P extrema, with the latter playing the part of states with opposite spins. It is shown that as a result of the motion in momentum and spin spaces being correlated the spin relaxation due to this distortion is smaller than that for the (0001) surface.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    N. S. Averkiev & G. E. Pikus

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  1. N. S. Averkiev
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  2. G. E. Pikus
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Fiz. Tverd. Tela (St. Petersburg) 39, 1659–1664 (September 1997)

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Averkiev, N.S., Pikus, G.E. Weak carrier localization on the \((10\bar 10)\) tellurium surface. Phys. Solid State 39, 1481–1486 (1997). https://doi.org/10.1134/1.1130104

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  • DOI: https://doi.org/10.1134/1.1130104

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